PART |
Description |
Maker |
Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 |
4M x 1 Bit FPM DRAM 3.3 V 60 ns 4M x 1 Bit FPM DRAM 3.3 V 50 ns -4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1 Bit FPM DRAM 3.3 V 70 ns From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 H |
4M x 4 Bit FPM DRAM 5 V 4k 60ns 4M x 4 Bit FPM DRAM 5 V 4k 50ns -4M x 4-Bit Dynamic RAM
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
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Micron Technology, Inc.
|
IC41C16105 IC41LV16105 IC41LV16105-60TI IC41C16105 |
1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 100万166兆)动态RAM的快速页面模 DYNAMIC RAM, FPM DRAM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ICSI ETC[ETC] Integrated Circuit Solution Inc
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HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered 1M x 64 Bit DRAM Module unbuffered From old datasheet system 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
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http:// SIEMENS A G SIEMENS AG
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